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Crystalline to amorphous transformation in silicon [electronic resource].

Published:
Berkeley, Calif. : Lawrence Berkeley National Laboratory, 1982.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:
Pages: 101 : digital, PDF file
Additional Creators:
Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects.
Report Numbers:
E 1.99:lbl-14923
lbl-14923
Subject(s):
Other Subject(s):
Note:
Published through SciTech Connect.
09/01/1982.
"lbl-14923"
"DE83003713"
Cheruvu, S.M.
Funding Information:
AC03-76SF00098
View MARC record | catkey: 14458409