Crystalline growth of wurtzite GaN on (111) GaAs [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy, 1991.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description
- Pages: (6 pages) : digital, PDF file
- Additional Creators
- Lawrence Berkeley National Laboratory, United States. Department of Energy, National Science Foundation (U.S.), and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Gallium Nitride films were grown on (111) gallium arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite. Heteroepitaxy was observed for growth temperatures between 550-600°C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17°. Possible surface reconstructions to explain the epitaxial growth are presented.
- Report Numbers
- E 1.99:lbl-32258
E 1.99: conf-911202--85
conf-911202--85
lbl-32258 - Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
12/01/1991.
"lbl-32258"
" conf-911202--85"
"DE92041165"
": 1-442427-21482"
Annual fall meeting of the Materials Research Society, Boston, MA (United States), 2-6 Dec 1991.
Ross, J.; Rubin, M.; Gustafson, T.K. . Dept. of Electrical En. - Funding Information
- AC03-76SF00098
View MARC record | catkey: 14458967