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Ion damage calculations in crystalline silicon [electronic resource].

Published
Oak Ridge, Tenn. : Oak Ridge National Laboratory, 1985.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
Pages: 15 : digital, PDF file
Additional Creators
Oak Ridge National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Damage profiles in crystalline silicon produced by light (B) and heavy (Bi) ions with energies from 10 to 100 keV were studied using the computer program MARLOWE (version 12). The program follows not only the incident ion collision by collision, but also any Si target atom that is set into motion through an energetic collision. Thus, the transport effect of the complete cascade of recoiled target atoms is included in the damage profile. The influence of channeling was studied for Si(100) using beam tilt angles from the surface normal of 0/sup 0/, 3/sup 0/ and 7/sup 0/ about the (001) or (011) axes. The effects of channeling on the damage profile are twofold: first, there is a large reduction of the central damage peak; second, there is a component of the damage profile that extends considerably deeper into the target than that found in conventional studies using a random target assemblage. The influence of amorphous overlayers of SiO/sub 2/ on the damage and implantation profiles in the Si(100) substrate has also been investigated.
Report Numbers
E 1.99:conf-850813-2
conf-850813-2
Subject(s)
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Note
Published through SciTech Connect.
07/01/1985.
"conf-850813-2"
"DE85016931"
11. international conference on atomic collisions in solids, Washington, DC, USA, 4 Aug 1985.
Oen, O.S.
Funding Information
AC05-84OR21400
View MARC record | catkey: 14459008