Time-resolved studies of ultrarapid solidification of highly undercooled molten silicon formed by pulsed laser irradiation [electronic resource].
- Oak Ridge, Tenn. : Oak Ridge National Laboratory, 1984.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 6 : digital, PDF file
- Additional Creators:
- Oak Ridge National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- This paper reports new results of nanosecond-resolution time-resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si-implanted amorphous (a) silicon layers, which, together with model calculations and post-irradiation TEM measurements, have allowed us to study both the transformation of a-Si to a highly undercooled liquid (l) phase and the subsequent ultrarapid solidification process.
- Report Numbers:
- E 1.99:conf-840879-5
- Other Subject(s):
- Published through SciTech Connect.
17. international conference on the physics of semiconductors, San Francisco, CA, USA, 6 Aug 1984.
Wood, R.F.; Carpenter, R.; Lowndes, D.H.; Jellison, G.E. Jr.
- Funding Information:
View MARC record | catkey: 14459167