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(Magnetic properties of doped semiconductors) [electronic resource].

Published
Washington, D.C : United States. Dept. of Energy. Office of Energy Research, 1990.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
Pages: (9 pages) : digital, PDF file
Additional Creators
United States. Department of Energy. Office of Energy Research and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Research continued on the transport behavior of doped semiconductors on both sides of the metal-insulator transition, and the approach to the transition from both the insulating and the metallic side. Work is described on magneto resistance of a series of metallic Si:B samples and CdSe. (CBS)
Report Numbers
E 1.99:doe/er/45153-t3
doe/er/45153-t3
Subject(s)
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Note
Published through SciTech Connect.
01/01/1990.
"doe/er/45153-t3"
"DE91002395"
City Univ. of New York, NY (USA). Research Foundation
Funding Information
FG02-84ER45153
View MARC record | catkey: 14459575