Time resolved reflectivity measurements in Pb-implanted SrTiO/sub 3 [electronic resource].
- Oak Ridge, Tenn. : Oak Ridge National Laboratory, 1989. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 17 : digital, PDF file
- Additional Creators:
- Oak Ridge National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Time resolved optical reflectivity (TRR) is a simple and elegant technique for dynamically monitoring the interface motion that occurs during crystallization of thin films and amorphous layers on crystalline substrates. This in situ technique has enabled measurements of the solid-phase epitaxial regrowth rate of amorphous silicon layers produced by ion implantation to be extended by over five orders of magnitude to rates in excess of 10/sup 6/ /angstrom//s. TRR is also well suited to measurements of crystallization kinetics in ion-implanted ceramic oxides. In the present work, the technique is used to directly monitor the regrowth during thermal annealing of amorphous layers produced by ion implantation in the crystalline ceramic oxide SrTiO/sub 3/. In particular, the effect of ambient water vapour on the epitaxial regrowth rate of amorphous layers in these materials has been examined. This study provides new insight into the role of water in regrowth of materials of this nature and clearly illustrates the utility of TRR in measurements of crystallization rates in ceramic oxides. 11 refs., 5 figs.
- Published through SciTech Connect., 06/01/1989., "conf-8906155-4", "DE89016234", Radiation effects in insulators-5: crystalline oxides and ceramics session, Hamilton, Canada, 19-23 Jun 1989., and White, C.W.; McCallum, J.C.; Boatner, L.A.; Rankin, J.
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