Novel thin-film CuInSe sub 2 fabrication [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 1992.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: Pages: (20 pages) : digital, PDF file
Additional Creators:: United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

This report describes work to form thin films of CuInSe₂ (CIS) by annealing precursor films containing Cu, In, and Se in a rapid thermal processor. This involves two steps: (1) a precursor containing Cu, In, and Se is deposited on unheated substrates such that CIS does not form during this deposition step, and (2) the precursor is annealed in a rapid thermal processor to crystallize the CIS. Advantages of this process are that (1) no H₂Se is used; (2) concentration gradients can potentially be built into the film due to the rapid anneal; and (3) the precursor can potentially be deposited using scalable methods such as sputtering, solution growth, and electrodeposition. The deposition method used was three-source, elemental physical vapor deposition. At room temperature, such a method was considered to be a flexible way to deposit a precursor that would be fairly typical of precursors deposited by more scalable techniques. Precursors were made both by the stacked elemental layer approach, where one element at a time wsas evaporated, as well as by a co-evaporation method. Adhesion problems limited device performance, and the co-evaporated precursors displayed unintended segregation of Cu and I in a direction normal to the film plane. The best cell efficiency was 3.5%.

Report Numbers:

E 1.99:nrel/tp-451-5014
nrel/tp-451-5014

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Note:

Published through SciTech Connect.
09/01/1992.
"nrel/tp-451-5014"
"DE92016440"
Gabor, A.; Hermann, A.
National Renewable Energy Lab., Golden, CO (United States)
Colorado Univ., Boulder, CO (United States)

Funding Information:

AC02-83CH10093

View MARC record | catkey: 14459720