New materials properties achievable by ion implantation doping and laser processing [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1978. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 9 : digital, PDF file
- Additional Creators:
- Oak Ridge National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- It is well established that ion implantation techniques can be used to introduce selected impurities into solids in a controlled, accurate and often unique manner. Recent experiments have shown that pulsed laser processing of materials can lead to surface melting, dopant redistribution and crystal regrowth, all on extremely short time scales (approx. < 1 ..mu.. sec.). These two processes can be combined to achieve properties not possible with normal materials preparation techniques, or to alter materials properties in a more efficient manner. Investigations are presented utilizing the combined techniques of positive ion scattering-channeling, x-ray scattering and transmission electron microscopy which show that supersaturated alloys can be formed in the surface regions (approx. 1 ..mu..m) of ion implanted, laser annealed silicon single crystals, and that these surfaces undergo a unique one dimensional lattice contraction or expansion depending on the dopant species. The resultant surface has a lattice parameter significantly different from the bulk, is free from any damage defects, has essentially all the dopant atoms in substitutional sites and the impurity concentrations can exceed solid solubility limits by more than an order of magnitude.
- Published through SciTech Connect., 12/01/1978., "conf-781121--22", Annual meeting of Materials Research Society, Boston, MA, USA, 28 Nov 1978., and Narayan, J.; White, C. W.; Larson, B. C.; Wilson, S. R.; Appleton, B. R.; Pronko, P. P.
- Funding Information:
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