Ion beam mixing of marker layers in Al and Si. [300 keV Ar ions] [electronic resource].
- Argonne, Ill. : Argonne National Laboratory, 1984. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 11 : digital, PDF file
- Additional Creators:
- Argonne National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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- Free-to-read Unrestricted online access
- Ion beam mixing experiments on thin Pt, Au, and Ni markers in Al and Si have performed at 17, 85, and 300 K. After irradiation with 300-keV Ar ions the broadening and relative shifts of the markers have been determined by RBS measurements. The marker broadenings are more pronounced in Si than in Al; in both matrices the broadenings decrease in the following order: Au, Pt, and Ni. No dependence of mixing on irradiation temperature was observed between 17 and 300 K. The shifts of the heavy Au and Pt markers relative to the Ni markers are approximately equal to the experimental accuracy. However, a shift of the Ni marker toward the surface relative to the heavier Au and Pt markers was consistently observed. 13 references, 2 figures.
- Published through SciTech Connect., 07/01/1984., "conf-840760-17", "DE85006227", Ion beam modification of materials conference, Ithaca, NY, USA, 16 Jul 1984., and Thompson, L.J. Jr.; Rehn, L.E.; Averback, R.S.; Mantl, S.
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