Sizing single crystal sapphire [electronic resource].
- Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1976.
- Additional Creators:
- United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Although there are several significant advantages to using single crystal sapphire as substrate material for hybrid microcircuits, the sizing of this material can be far more troublesome than the sizing of alternate material, such as polycrystal alumina. The work done in developing a satisfactory method of sizing single crystal sapphire is described. The results of sizing using grinding wheels, wire saws, and laser scribers are given. It was concluded that laser scribing is a viable method of sizing if the sapphire is grown parallel to the r plane. This takes advantage of the easy crystal cleavage planes and reduces the risk of edge chipping and nonperpendicular breaking.
- Published through SciTech Connect., 03/01/1976., "sand-75-0614", Bushmire, D.W., and Sandia Labs., Albuquerque, N.Mex. (USA)
- Funding Information:
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