Annealing of interstitial loops in arsenic implanted silicon [electronic resource].
- Published
- Berkeley, Calif. : Lawrence Berkeley National Laboratory, 1983.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description
- Pages: 13 : digital, PDF file
- Additional Creators
- Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- The annealing effect of different gas ambient (N/sub 2/ or O/sub 2/) on high dose (5 x 10/sup 15/) As-ion-implanted Si wafer has been investigated by using transmission electronic microscope. A two-layer defect structure is observed. The lower layer defects are interstitial type and attributed to the amorphous island below original crystalline-amorphous interface. The upper layer loops are As precipitation in the form of stacking fault. By comparing the growth/shrinkage rate of interstitial loops during neutral and oxygen annealing, it is proved that interstitial silicons are injected into bulk silicon during oxidation.
- Report Numbers
- E 1.99:lbl-15491-rev.
E 1.99: conf-830508-4-rev.
conf-830508-4-rev.
lbl-15491-rev. - Subject(s)
- Other Subject(s)
- Silicon
- Ion Implantation
- Annealing
- Arsenic Ions
- Defects
- Interstitials
- Kev Range 100-1000
- Nitrogen
- Oxidation
- Oxygen
- Stacking Faults
- Transmission Electron Microscopy
- Charged Particles
- Chemical Reactions
- Crystal Defects
- Crystal Structure
- Electron Microscopy
- Elements
- Energy Range
- Heat Treatments
- Ions
- Kev Range
- Microscopy
- Nonmetals
- Point Defects
- Semimetals
- Note
- Published through SciTech Connect.
05/01/1983.
"lbl-15491-rev."
" conf-830508-4-rev."
"DE84000384"
163. Electrochemical Society meeting, San Francisco, CA, USA, 8 May 1983.
Washburn, J.; Sadana, D.K.; Wu, N.R.; Ling, P.; Current, M.I. - Funding Information
- AC03-76SF00098
View MARC record | catkey: 14461082