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Optical and electron transport properties of reactively sputtered Cu/sub x/S [electronic resource].

Published
Livermore, Calif. : Lawrence Livermore Laboratory, 1980.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
Pages: 197 : digital, PDF file
Additional Creators
Lawrence Livermore Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Thin films of Cu/sub x/S were deposited on glass slides by sputtering Cu in a reactive H/sub 2/S/Ar environment. Optical transmittance and reflectance measurements were used to explore the infrared absorption spectra of the material. Analysis of the absorption edge characteristics resulted in the identification of an indirect bandgap at 1.15 (+-.05) eV, a direct bandgap at 1.30 (+-.05) eV, and an electron effective mass of 1.0 (+-0.2) m/sub 0/. Electrical data consisting of resistivity and Hall effect measurements from liquid nitrogen to room temperature were analyzed to determine the dominant scattering mechanisms limiting the hole mobility in the material. Ionized impurity scattering was the dominant mechanism at low temperatures (T < 100/sup 0/K) and polar optical phonon scattering was most effective at high temperatures (T > 150/sup 0/K). All films were p-type. Effects of sputtering gas pressure, heat treatments, and temperature on the properties were studied.
Report Numbers
E 1.99:ucrl-52963
ucrl-52963
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Note
Published through SciTech Connect.
06/30/1980.
"ucrl-52963"
Leong, J.Y.C.
Funding Information
W-7405-ENG-48
View MARC record | catkey: 14461532