Surface and bulk vibrations in ion-implanted amorphous silica [electronic resource].
- Albuquerque, N.M. : Sandia National Laboratories, 1980. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 5 : digital, PDF file
- Additional Creators:
- Sandia National Laboratories and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Infrared reflection spectroscopy (IRS) has been used to identify the Si-O vibrational mode and confirm previous assignments of Si-OH, and Si-OD vibrational modes in porous amorphous silica implanted with heavy ions and with H/sup +/ and D/sup +/ ions. The Si-O stretching mode (approx. 1015 cm/sup -1/) is produced by the damage cascade and is seen in all implanted bulk silicas as well as in porous silica. Implantation of porous silica with H/sup +/ and D/sup +/ ions produces bands at approx. 985 cm/sup -1/ and approx. 960 cm-/sup 1/, respectively. The position of all three bands is consistent with O, OH, and OD mass considerations. Implantation of D/sup +/ ions into porous silica containing molecular water and OH/sup -/ groups results in D-H exchange. The Si-OH and Si-OD vibrations are also seen in the bulk fused silica at low H/D fluences. These results suggest that intrinsic E'-type defects in bulk silica and dangling Si bonds at internal surface sites.
- Published through SciTech Connect., 01/01/1980., "sand-80-0431c", " conf-800647-2", International conference on the physics of MOS insulators, Raleigh, NC, USA, 18 Jun 1980., and Arnold, G. W.
- Funding Information:
View MARC record | catkey: 14461655