Transient annealing of GaAs by electron and laser beams [electronic resource].

Published: Pasadena, Calif. : California Institute of Technology, 1979.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: Pages: 10 : digital, PDF file
Additional Creators: California Institute of Technology and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

Results of pulsed electron beam and ruby laser irradiations of high- and low-dose implanted layers in GaAs were studied. Ruby laser and electron beam irradiations result in peak concentrations higher than can be obtained in furnace annealing. Mobilities after transient annealing are usually lower as compared to conventional annealing. Implantation at doses below the 10/sup 13/ cm/sup -2/ level show poor or no electrical activity after transient annealing. (FS)

Report Numbers

E 1.99:lbl-9793
E 1.99: conf-791017-13
conf-791017-13
lbl-9793

Subject(s)

Materials Science

Other Subject(s)

Note

Published through SciTech Connect.
09/01/1979.
"lbl-9793"
" conf-791017-13"
7. international conference on chemical vapor deposition, Los Angeles, CA, USA, 14 Oct 1979.
Washburn, J.; Nicolet, M.A.; Golecki, I.; Sadana, D.K.; Tandon, J.L.; Ashbeck, P.M.

Funding Information

W-7405-ENG-48

View MARC record | catkey: 14461755