Boron arsenide thin film solar cell development. Quarterly report No. 1 [electronic resource].
- Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1979.
- Physical Description:
- Pages: 56 : digital, PDF file
- Additional Creators:
- United States. Department of Energy. Office of Scientific and Technical Information
- A large portion of the effort expended in the first quarter was devoted to the design, assembly, and testing of the film growth apparatus. The reactor has been completed and tested by depositing boron from diborane gas onto heated quartz substrates. The objective of this effort was to achieve film growth, which has been accomplished. Within the last month, attempts to grow boron arsenide films have been made by introducing both diborane and arsine into the reactor. Thin films have been grown on quartz and sapphire (alumina) substrates. Variations in film thickness, composition, degree of crystallinity, and conductivity have been observed as a result of variation of the deposition parameters, such as type and flow rate of carrier gases, substrate temperature, and substrate materials. X-ray analysis of several samples indicates that films containing boron and arsenic have been grown. No crystalline films have been produced to date. Electrical and optical measurements indicate some correlation between at least one of the films grown and the results achieved by Chu, et al. on BAs. Thus far, the electrical conductivity, film topography, optical absorption, index of refraction, impurity type, and photo-conductivity have been investigated on one sample. This material appears to be B/sub x/As/sub y/ and could be BAs. Further investigations will be required to be conclusive.
- Published through SciTech Connect.
Boone, J.L.; Van Doren, T.P.
Missouri Univ., Rolla (USA). Dept. of Electrical Engineering
Eagle-Picher Industries, Inc., Miami, OK (USA). Miami Research Labs.
- Funding Information:
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