Actions for Floating Substrate Process. Large-Area Silicon Sheet Task, Low-Cost Solar Array Project. Final report [electronic resource].

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Floating Substrate Process. Large-Area Silicon Sheet Task, Low-Cost Solar Array Project. Final report [electronic resource].

Published
Cincinnati, Ohio : General Electric Company, 1978.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
Pages: 88 : digital, PDF file
Additional Creators
General Electric Company and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The work described was directed toward the demonstration of the practical feasibility of the Floating Substrate Process for the growth of silicon sheet. Supercooling of silicon--tin alloy melts was studied. Values as high as 78/sup 0/C at 1100/sup 0/C and 39/sup 0/C at 1200/sup 0/C were observed, corresponding to supersaturation parameter values 0.025 and 0.053 at 1050/sup 0/C and 1150/sup 0/C, respectively. The interaction of tin with silane gas streams was investigated over the temperature range 1000 to 1200/sup 0/C. Single-pass conversion efficiencies exceeding 30% were obtained. The growth habit of spontaneously-nucleated surface growth was determined to be consistent with dendritic and web growth from <111> singly-twinned triangular nucleii. Surface growth of interlocking silicon crystals, thin enough to follow the surface of the liquid and with growth velocity as high as 5 mm/min, was obtained. Large area single-crystal growth along the melt surface was not achieved. Small single-crystal surface growth was obtained which did not propagate beyond a few millimeters. The probable reason for the polycrystalline growth is the poisoning of the growth interface by impurities.
Report Numbers
E 1.99:doe/jpl/954350-3
doe/jpl/954350-3
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Note
Published through SciTech Connect.
06/23/1978.
"doe/jpl/954350-3"
Garfinkel, M.; Hall, R.N.
Funding Information
NAS-7-100-954350
View MARC record | catkey: 14462066