Kinetics of the chemical vapor deposition of GaAs from Ga(CH/sub 3/)/sub 3/ and AsH/sub 3 [electronic resource].

Published: Berkeley, Calif. : University of California, Berkeley, 1977.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: Pages: 14 : digital, PDF file
Additional Creators: University of California, Berkeley and United States. Department of Energy. Office of Scientific and Technical Information

Access Online

www.osti.gov

Availability

Finding items...

Restrictions on Access

Free-to-read Unrestricted online access

Summary

The kinetics of the chemical vapor deposition of GaAs from trimethyl gallium and arsine in a hydrogen carrier gas is studied in detail to determine the effect of growth conditions on the deposition rate, and to determine the factors affecting the defect morphology of single crystal GaAs layers deposited on (100) GaAs substrates. Thermochemical studies are performed to define species partial pressures in the gas phase. A mass transport model for the reactor is presented to serve as a basis for comparison of experimental data with kinetic models for the growth process.

Report Numbers

E 1.99:lbl-6903
E 1.99: conf-771004-4
conf-771004-4
lbl-6903

Subject(s)

Other Subject(s)

Note

Published through SciTech Connect.
08/01/1977.
"lbl-6903"
" conf-771004-4"
6. international conference on chemical vapor deposition, Atlanta, GA, USA, 10 Oct 1977.
Donaghey, L.F.; Lin, A.L.; Dao, V.

Funding Information

W-7405-ENG-48

View MARC record | catkey: 14462302