Actions for EBIC and HVTEM studies of RTR silicon ribbon [electronic resource].

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EBIC and HVTEM studies of RTR silicon ribbon [electronic resource].

Published
Ithaca, N.Y. : Cornell University. Department of Materials Science and Engineering, 1981.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
Pages: 17 : digital, PDF file
Additional Creators
Cornell University. Department of Materials Science and Engineering and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The defect structure of RTR ribbon No. 6-731, run 803 was studied by CTEM, EBIC and HVTEM. Prior to laser recrystallization the defect structure consists of closely spaced twin and grain boundaries. Precipitation of impurities occurs after laser recrystallization. The observation of electrically active defects in EBIC has been correlated with HVTEM studies Pairs of electrically active defects in twin boundaries are due to stacking faults connecting the twin boundaries.
Report Numbers
E 1.99:doe/jpl/954852-7
doe/jpl/954852-7
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
04/01/1981.
"doe/jpl/954852-7"
Cunningham, B.; Strunk, H.; Ast, D.
Funding Information
NAS-7-100-954852
View MARC record | catkey: 14462583