Emerging materials systems for solar cell applications [electronic resource] : Cu/sub 2-x/Se. Third quarterly technical progress report, November 1, 1979-February 1, 1980
- Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1980.
- Physical Description:
- Pages: 17 : digital, PDF file
- Additional Creators:
- United States. Department of Energy. Office of Scientific and Technical Information
- The purpose of this program is to investigate the feasibility of using Cu/sub 2-x/Se as a semiconductor material for the low cost production of photovoltaic solar cells. The Cu/sub 2-x/Se films are produced by coevaporation from individually monitored Cu and Se vapor sources. With a substrate temperature of 170/sup 0/C, single phase cubic Cu/sub 2-x/Se films have been produced. These films have a direct band gap of 2.2 eV and an indirect band gap of 1.4 eV. Fabrication of Cu/sub 2-x/Se/CdS cells has begun. Both front wall and back wall cells have been made. A theoretical computation on the thin-film Cu/sub 2-x/Se/CdS cell has indicated an achievable efficiency of greater than 10%.
- Published through SciTech Connect.
Mickelsen, R.A.; Stewart, J.M.; Chen, W.S.
Boeing Aerospace Co., Seattle, WA (USA)
- Funding Information:
View MARC record | catkey: 14462825