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Cadmium sulfide/copper ternary heterojunction cell research. Final report, January 8, 1979-June 7, 1980 [electronic resource].

Published
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1980.
Physical Description
Pages: 29 : digital, PDF file
Additional Creators
United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Dual source, Se and CuInSe/sub 2/, coevaporation and flash evaporation of stoichiometric CuInSe/sub 2/ powder were investigated to develop a process of fabricating large area CdS/CuInSe/sub 2/ heterojunction solar cells. CuInSe/sub 2/ was seen to decompose upon evaporation, producing layered films in the dual source system. Annealing of these films and alternative dual sources have been considered. Single phase p type films have been produced but no devices have been made from such films. Flash evaporation circumvents the decomposition problem, and if one bakes the powder to obtain a small Cu excess as well as getting a Se excess in the film, p type CuInSe/sub 2/ films can be obtained. A 1% efficient device of 6 cm/sup 2/ area was made using a flash evaporated CuInSe/sub 2/ film. Annealing studies and measurements of spatial uniformity of this device are reported.
Report Numbers
E 1.99:seri/tr-8010-1-t1
seri/tr-8010-1-t1
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Note
Published through SciTech Connect.
01/01/1980.
"seri/tr-8010-1-t1"
Fleming, D. L.
Sperry Univac, St. Paul, MN (USA)
Funding Information
AC02-77CH00178
View MARC record | catkey: 14462842