Actions for High efficiency thin film CdTe solar cells. Second quarterly progress report, June 19-September 18, 1979 [electronic resource].

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High efficiency thin film CdTe solar cells. Second quarterly progress report, June 19-September 18, 1979 [electronic resource].

Published
Washington, D.C. : United States. Department of Energy. Office of Management, 1979.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
Pages: 21 : digital, PDF file
Additional Creators
United States. Department of Energy. Office of Management and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
During the second quarter of this program primary emphasis was put into depositing and evaluating both n and p-type CdTe films on a variety of conducting and non-conducting substrates. Improvements in the deposition apparatus permitted preparation of a large number of CdTe films and numerous analytic techniques available at Tufts University were utilized to examine these films. It was found that the introduction of a thin (100 A). In layer between the ITO and the CdTe significantly reduced the previously observed barrier present at the ITO/n-CdTe interface without adversely reducing optical transmission. While the resistivity of the films is still rather high, very recent results show that proper changes in procedure are capable of markedly lowering the resistivity. Preliminary Schottky barrier devices have been made which show promising photovoltaic characteristics.
Report Numbers
E 1.99:doe/et/23012-t2
doe/et/23012-t2
Subject(s)
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Note
Published through SciTech Connect.
10/01/1979.
"doe/et/23012-t2"
Serreze, H.B.; Entine, G.; Goldner, R.B.
Funding Information
AC04-79ET23012
View MARC record | catkey: 14462898