High efficiency thin film CdTe solar cells. Second quarterly progress report, July 1, 1980-September 30, 1980 [electronic resource].
- Washington, D.C. : United States. Department of Energy. Office of Management, 1980.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 28 : digital, PDF file
- Additional Creators:
- United States. Department of Energy. Office of Management
United States. Department of Energy. Office of Scientific and Technical Information
- Thin films of CdTe have been vacuum deposited onto glass and ITO-coated glass substrates using a hot-wall technique. Improved source conditions and system cleanliness have enabled large pinhole-free regions capable of providing our first large area evaporated Au devices (greater than 1 cm/sup 2/). An optimized Au thickness has been determined and characterized in terms of sheet resistance and optical transmission. An evaporated Au/Ag combined grid and a SiO AR coating have yielded 1 cm/sup 2/ active area Au-CdTe-ITO devices with J/sub sc/ = 13 mA/cm/sup 2/ and V/sub oc/ of 0.43 volt. The 1.4% efficiency is only temporarily limited by the uncharacteristically low 0.25 fill factor which is believed to be caused by an anomaly near the ITO contact. A three-source system with effusion cell type sources and a rotary shutter has been designed, built, and successfully tested. This more sophisticated system should greatly improve our control over film and device reproducibility and also provide greater versatility in controlling doping concentration and film stoichiometry. In addition, this new system will allow for in situ deposition of an In flash in order to improve the ITO-CdTe contact behavior. Furthermore, the system offers possibilities for p-n junction deposition without breaking vacuum.
- Published through SciTech Connect.
Johnson, B.; Entine, G.; Serreze, H. B.; Reiff, G.; Goldner, R. B.
- Funding Information:
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