Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic solar cells. Ninth quarterly report, September 1, 1980-November 31, 1980 [electronic resource].

Published: Newark, Del. : University of Delaware, 1980.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: Pages: 57 : digital, PDF file
Additional Creators: University of Delaware and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

Frequency and voltage dependent capacitance measurements of ZnO/Zn/sub 3/P/sub 2/ heterojunctions have been made and the results interpreted according to a model which considers the total capacitance arising from contributions due to the depletion layer capacitance, interface charges and a dipole charge. The capacitance of the devices is anomalously high at low frequencies but agrees well with the value calculated from the bulk carrier density at 1 MHz. The data suggest a significant contribution to the capacitance from the charging and discharging of interface states. Direct evidence for a relationship between defects in the Zn/sub 3/P/sub 2/ (grains boundaries, dislocations, etc.,) and the collected current have been found by comparing EBIC images of ZnO/Zn/sub 3/P/sub 2/ devices with the etched surfaces of the samples. The series resistance of thin film Zn/sub 3/P/sub 2/ devices has been analyzed and the origin of the series resistance considered. A new substrate consisting of sequentially deposited layers of Fe and Si on mica has resulted in improved device performance. Devices with a conversion efficiency as high as 2.7% have been obtained. Fill factors in excess of 50% have been obtained for the first time. The diffusion coefficient of magnesium has been measured to 100/sup 0/C and 125/sup 0/C using a spectral response method. A model including contributions from both diffusion and space charge recombination terms was utilized to calculate the open circuit voltage and short circuit current as a function of junction depth of the n on p devices. A comparison of the experimental J/sub sc/ and V/sub oc/ as a function of junction depth was made by characterizing the devices after successive surface diffusions. Results are presented and disucssed. (WHK)

Report Numbers

E 1.99:seri/pr-9062-1-t5
seri/pr-9062-1-t5

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Published through SciTech Connect.
01/01/1980.
"seri/pr-9062-1-t5"

Funding Information

AC02-76CH00178

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