Emerging materials for solar cell applications [electronic resource] : electrodeposited CdTe. Third quarter report, September 1-November 30, 1979

Published:: Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1979.
Physical Description:: Pages: 27 : digital, PDF file
Additional Creators:: United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Major emphasis during the period was centered on improving the material properties of electrodeposited CdTe. Using newly devised means for peeling thin CdTe films off the ITO-coated glass substrates, it was possible to accurately measure material density and electrical resistivity. Density proved to be 40% below the bulk CdTe figure of about 6 gm/cm/sup 3/, while resistivity of supposedly doped CdTe films exceeded 10/sup 5/..cap omega.. - cm. These findings prompted initiation of a beneficial change in plating procedures which increased the thin film polycrystalline CdTe density to the bulk value while, at the same time, good columnar growth was obtained. Films made under the old plating process were made into Schottky diodes showing good uniformity and V/sub oc/ values generally exceeding 0.5V. Short circuit current of the best of these was 9.5mA/cm/sup 2/ despite the fact that light entered through a thick gold film and was strongly attenuated.

Report Numbers:

E 1.99:doe/et/23008-t2
doe/et/23008-t2

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Published through SciTech Connect.
12/20/1979.
"doe/et/23008-t2"
Bunshah, R.; Rod, R.L.; Stafsudd, O.; Shkedi, Z.
Monosolar, Inc., Santa Monica, CA (USA)

Funding Information:

AC04-79ET23008

View MARC record | catkey: 14463439