Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A. / editors, T.J. Mountziaris [and others].
- Published:
- Pittsburgh, Pa. : Materials Research Society, [1994]
- Copyright Date:
- ©1994
- Physical Description:
- xv, 556 pages : illustrations ; 24 cm.
- Additional Creators:
- Mountziaris, Triantafillos John and Materials Research Society
Online Version
- Series:
- Contents:
- Machine generated contents note: Materials Research Society Symposium Proceedings -- Gas-Phase Silicon Atom Densities in the Chemical Vapor Deposition of Silicon from Silane / Michael E. Coltrin / William G. Breiland / Pauline Ho -- Gas Phase and Gas Surface Kinetics of Transient Silicon Hydride Species / Joseph M. Jasinski -- Theoretical Prediction of Gas-Phase Nucleation Kinetics of SiO / Michael R. Zachariah / Wing Tsang -- Atomic Layer Growth of SiO[subscript 2] on Si(100) Using the Sequential Deposition of SiCl[subscript 4] and H[subscript 2]O / Ofer Sneh / Michael L. Wise / Lynne A. Okada / Andrew W. Ott / Steven M. George -- Infrared Studies of Ozone-Organosilicon Chemistries for SiO[subscript 2] Deposition / J. A. Mucha / J. Washington -- Diethyldiethoxysilane as a New Precursor for SiO[subscript 2] Growth on Silicon / Michael L. Wise / Ofer Sneh / Lynne A. Okada / Anne C. Dillon / Steven M. George -- Decomposition Study of TEOS in Thermal CVD / Hideki Takeuchi / Hirohiko Izumi / Atsushi Kawasaki -- Direct Measurement of the Reactivity of NH and OH on a Silicon Nitride Surface / R. J. Buss / P. Ho / E. R. Fisher / William G. Breiland -- Surface Chemistry of Boron-Doped SiO[subscript 2] CVD: Enhanced Uptake of Tetraethyl Orthosilicate by Hydroxyl Groups Bonded to Boron / Michael E. Bartram / Harry K. Moffat -- Predictive Surface Kinetic Analysis: The Case of TiSi[subscript 2] CVD / M. A. Mendicino / R. P. Southwell / E. G. Seebauer -- Hydrogen Pairing on Si(100)-(2 x 1): A Site-Blocking Study / Wolf Widdra / W. Henry Weinberg -- Molecular Dynamics Simulation of Large Cluster Growth / Michael R. Zachariah / Michael J. Carrier / Estela Blaisten-Barojas -- Room Temperature Fabrication of Micro-Crystalline Silicon Films for TFT's by ECR PECVD / Yoo-Chan Jeon / Seok-Woon Lee / Seung-Ki Joo -- Growth of Silicon Films Onto Fluororesin Surface by ArF Excimer Laser / T. Miyokawa / M. Okoshi / K. Toyoda / M. Murahara -- Pyrolytic LCVD of Silicon Using a Pulsed Visible Laser-Experiment and Modelling / B. Ivanov / C. Popov / V. Shanov / D. Filipov -- Effect of Post Exposed Hydrogen on Chemisorbed Ethylene on Si(100)-(2 x 1) / Wolf Widdra / Chen Huang / W. Henry Weinberg -- The Decomposition of Methyltrichlorosilane: Studies in a High-Temperature Flow Reactor / Mark D. Allendorf / Thomas H. Osterheld / Carl F. Mellus -- Heterogeneous Kinetics of the Chemical Vapor Deposition of Silicon Carbide from Methyltrichlorosilane / George D. Papasouliotis / Stratis V. Sotirchos -- Reaction Kinetics on Diamond: Measurement of H Atom Destruction Rates / Stephen J. Harris / Anita M. Weiner -- A Novel Molecular Beam Reactor for the Study of Diamond Surface Chemistry / C. A. Wolden / G. Zau / W. T. Conner / H. H. Sawin / K. K. Gleason -- Using Molecular-Beam Mass Spectrometry to Study the PECVD of Diamondlike Carbon Films / I. B. Graff / R. A. Pugliese, Jr. / P. R. Westmoreland -- Effect of Oxygen on Diamond Deposition in [actual symbol not reproducible] Gas Mixtures / H. Matsuyama / N. Sato / H. Kawakami -- Mass Spectrometric Analysis of a High Pressure, Inductively Coupled Plasma During Diamond Film Growth / Peter G. Greuel / Hyun J. Yoon / Douglas W. Ernie / Jeffrey T. Roberts -- Selective Growth of Diamond Films on Mirror-Polished Silicon Substrates / M. Y. Mao / S. S. Tan / X. K. Zhang / W. Y. Wang -- Real Time Control of III-V Semiconductor Surfaces During MOVPE Growth by Reflectance Anisotropy Spectroscopy / K. Ploska / W. Richter / F. Reinhardt / J. Jonsson / J. Rumberg / M. Zorn -- Gas-Phase and Surface Decomposition of Tris-Dimethylamino Arsenic / Ming Xi / Sateria Salim / Klavs F. Jensen / David A. Bohling -- Kinetics of Low-Pressure MOCVD of GaAs from Triethyl-Gallium and Arsine / N. K. Ingle / C. Theodoropoulos / T. J. Mountziaris / R. M. Wexler / F. T. J. Smith -- The Role of Unprecracked Hydride Species Adsorbed on the GaAs(100) in the Growth of GaAs by Ultrahigh Vacuum Chemical Vapor Deposition Using Trimethylgallium and Triethylgallium / Seong-Ju Park / Jeong-Rae Ro / Jae-Ki Sim / Jeong Sook Ha / El-Hang Lee -- Controlled Impurity Introduction in CVD: Chemical, Electrical, and Morphological Influences / T. F. Kuech / J. M. Redwing / J.-W. Huang / S. Nayak -- Study of Silicon Incorporation in GaAs MOVPE Layers Grown with Tertiarybutylarsine / J. M. Redwing / T. F. Kuech / H. Simka / K. F. Jensen -- Preparation and Evaluation of Erbium Tris(Amide) Source Compounds for Erbium Doping of Semiconducting Materials / William S. Rees, Jr. / Uwe W. Lay / Anton C. Greenwald -- Tetraalkyldiarsines as Potential Precursors for Electronic Materials: Synthesis and Characterization of Various Iso-Propyl Arsenic Compounds / Lawrence F. Brough / Liu Gang / Matthew A. Lipkovich / Thomas J. Colacot / Virgil L. Goedken / William S. Rees, Jr. -- New Zinc-bis(Dialkylamides) Potentially Usable as Site-Selective Dopants for p-Type ZnSe / William S. Rees, Jr. / Oliver Just -- Growth of InAs and (InAs)[subscript 1](GaAs)[subscript 1] Superlattice Quantum Well Structures on GaAs by Atomic Layer Epitaxy Using Trimethylindium-Dimethylethylamine Adduct / Nobuyuki Ohtsuka / Osamu Ueda -- New Organometallic Selenium Reagents for Low Temperature OMCVD of ZnSe / M. Danek / J.-S. Huh / K. F. Jensen / D. C. Gordon / W. P. Kosar -- The Surface Chemistry of Cdte MOCVD / Wen-Shryang Liu / Gregory B. Raupp -- Nanosecond and Femtosecond UV Laser Ablation of CdTe (100): Time-of-Flight and Angular Distributions / P. D. Brewer / M. Spath / M. Stuke -- Picosecond Optical Second Harmonic Studies of Adsorbate Reduction Kinetics on Cadmium Sulfide / T. W. Scott / J. Martorell / Y. J. Chang -- Selective Deposition of ZnS Thin Films by KrF Excimer Laser on Patterned Zn Seeds / K. Yamane / M. Murahara -- Vapor Deposited Ag[subscript 2]S Films as High Resolution Photoregistering Materials in the Infrared Region / J. Eneva / S. Kitova / A. Panov / H. Haefke -- Probing Selective Deposition of Aluminum Using In Situ Infrared Spectroscopy / Wayne L. Gladfelter / Michael G. Simmonds / Larry A. Zazzera / John F. Evans -- Influence of Flow Dynamics on the Morphology of CVD Aluminum Thin Films / Donna M. Speckman / Denise L. Leung / Jerry P. Wendt -- First Principles Study of Aluminum Deposition on Hydrogen-Terminated Si(100) Surface / Carlos Sosa -- Properties of a New Liquid Organo Gold Compound for MOCVD / Hiroto Uchida / Norimichi Saitou / Masamitu Satou / Masayuki Tebakari / Katsumi Ogi -- Deposition of Tungsten Films by Pulsed Excimer Laser Ablation Techniques / A. M. Dhote / S. B. Ogale -- Gasdynamics and Chemistry in the Pulsed Laser Deposition of Oxide Dielectric Thin Films / John W. Hastie / David W. Bonnell / Albert J. Paul / Peter K. Schenck -- Adsorption and Reaction of TiCl[subscript 4] on W(100) / Wei Chen / Jeffrey T. Roberts -- ECR Plasma Enhanced MOCVD of Titanium Nitride / M. E. Gross / A. Weber / R. Nikulski / C.-P. Klages / R. M. Charatan / W. L. Brown / E. Dons / D. J. Eaglesham -- Investigations of TiN and Ti Film Deposition by Plasma Activated CVD Using Cyclopentadienyl Cycloheptatrienyl Titanium, A Low Oxidation State Precursor / Robert M. Chatatan / Mihal E. Gross / David J. Eaglesham -- Vaporization Chemistry of Organoaluminum Precursors to AIN / Paul D. Crocco / John B. Hudson / Yi Wang / Leonard V. Interrante -- Characterization of Silicon-Nitride Film Growth by Remote Plasma-Enhanced Chemical-Vapor Deposition (RPECVD) / Zhong Lu / Yi Ma / Scott Habermehl / Gerry Lucovsky -- Spectroscopic Investigations of Laser Ablated Germanium Oxide / Paul J. Wolf / Brian M. Patterson / Sarath Witanachchi -- Indium Tin Oxide Films Formation by Laser Ablation / J. P. Zheng / H. S. Kwok -- Excimer Laser Interactions with PTFE Relevant to Thin Film Growth / J. T. Dickinson / M. G. Norton / J.-J. Shin / W. Jiang / S. C. Langford -- Photochemical Modification of Fluorocarbon Resin Surface to Adhere with Epoxy Resin / M. Okoshi / T. Miyokawa / H. Kashiura / M. Murahara -- The Effects of Deposition Parameters on the Properties of SiO[subscript 2] Films Deposited by Microwave ECR Plasmas / T. T. Chau / P. M. Lam / K. C. Kao -- Flow Tube Kinetics of Gas-Phase CVD Reactions / Bruce H. Weiller -- High Rate Deposition of SiO[subscript 2] by the Remote PECVD Technique / Arichika Ishida / Masato Hiramatsu / Yoshito Kawakyu -- KrF Excimer Laser Induced Photochemical Modification of Polyphenylenesulfide Surface into Hydrophilic Property / H. Kashiura / M. Okoshi / M. Murahara -- New Dry-Etch Chemistries for III-V Semiconductors / S. J. Pearton / U. K. Chakrabarti / F. Ren / C. R. Abernathy / A. Katz / W. S. Hobson / C. Constantine -- GaAs Etching by Cl[subscript 2] and HCl, Ga-vs. As-Limited Etching / Chaochin Su / Zi-Guo Dai / Hui-Qi Hou / Ming Xi / Matthew F. Vernon / Brian E. Bent -- Scanning Tunneling Microscopy Observation of the Reaction of AlCl[subscript 3] on Si(111)-7x7 Surface / Katsuhiro Uesugi / Takaharu Takiguchi / Michiyoshi Izawa / Masamichi Yoshimura / Takafumi Yao -- Chemical Topography of Si Etching in a Cl, Plasma, Studied by X-Ray Photoelectron Spectroscopy and Laser-Induced Thermal Desorption / V. M. Donnally / K. V. Guinn / C. C. Cheng / I. P. Herman -- Kinetics of Reactive Ion Etching of Polymers in an Oxygen Plasma: The Importance of Direct Reactive Ion Etching / Sandra W. Graham / Christoph Steinbruchel -- High Selective Etching of SiO[subscript 2]/Si by ArF Excimer Laser / K. Kitamura / M. Murahara -- Plasma Etching and Surface Analysis of a-SiC:H Films Deposited by Low Temperature Plasma Enhanced Chemical Vapor Deposition / J. H. Thomas III / M. J. Loboda / J. A. Seifferly -- Confinement and Low-Energy Extraction of Photo-Fragment Ions Using RF Ion Trapping / Seiji Yamamoto / Kozo Mochiji / Isao Ochiai / Naohiko Mikami -- Surface Perturbation by Energetic Particle Beams / Che-Chen Chang / Jung-Yen Yang / Jaw-Chang Shieh -- and Contents note continued: Cleaning During Initial Stages of Epitaxial Growth in an Ultra-High Vacuum Rapid Thermal Chemical Vapor Deposition Reactor / Mahesh K. Sanganeria / Katherine E. Violette / Mehmet C. Ozturk / Gari Harris / C. Archie Lee / Dennis M. Maher -- The Impact of Gas Phase and Surface Chemical Reactions on Step Coverage in LPCVD / Gregory B. Raupp / Timothy S. Cale -- The Influence of Temperature Gradients on Partial Pressures in a CVD Reactor / T. G. M. Oosterlaken / G. J. Leusink / G. C. A. M. Janssen / S. Radelaar / K. J. Kuijlaars / C. R. Kleijn / H. E. A. Van Den Akker -- Surface Reaction Intermediates in Ge Chemical Vapor Deposition on Silicon / C. Michael Greenlief / Lori A. Keeling -- Growth and Characterization of Si-GaP and Si-GaP-Si Heterostructures / N. Dietz / S. Habermehl / J. T. Kelliher / G. Lucovsky / K. J. Bachmann -- The Role of Barium in the Heteroepitaxial Growth of Insulator and Semiconductors on Silicon / T. K. Chu / F. Santiago / M. Stumborg / C. A. Huber -- Topographical Effects Regarding Trench Structures Covered with RTCVD SiGe Thin Films / G. Ritter / J. Schlote / B. Tillack -- New Damage-Less Patterning Method of A GaAs Oxide Mask and its Application to Selective Growth by MOMBE / Seikoh Yoshida / Masahiro Sasaki -- Silicon Nucleation on Silicon Dioxide and Selective Epitaxy in an Ultra-High Vacuum Rapid Thermal Chemical Vapor Deposition Reactor Using Disilane in Hydrogen / Katherine E. Violette / Mahesh K. Sanganeria / Mehmet C. Ozturk / Gari Harris / Dennis M. Maher -- Perfect Selective Si Epitaxial Growth Realized by Synchrotron Radiation Irradiation During Disilane Molecular Beam Epitaxy / Yuichi Utsumi / Housei Akazawa / Masao Nagase -- Gate Quality Oxides Prepared by Rapid Thermal Chemical Vapor Deposition / R. T. Kuehn / X. Xu / D. J. Holcombe / V. Misra / J. J. Wortman / J. R. Hauser / Q.-F. Wang / D. M. Maher -- Growth Kinetics and Corresponding Luminescence Characteristics of Amorphous C:H Deposited from CH[subscript 4] by DC Saddle-Field Plasma-Assisted CVD / Roman V. Kruzelecky / Chun Wang / Stefan Zukotynski -- MOMBE Growth of YBCO Superconducting Films with In-Situ Monitoring of Rheed Oscillations / K. Endo / F. Hosseini Teherani / S. Yoshida / K. Kajimura / Y. Moriyasu.
- Subject(s):
- ISBN:
- 1558992332
- Note:
- AVAILABLE ONLINE TO AUTHORIZED PSU USERS.
- Bibliography Note:
- Includes bibliographical references and indexes.
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