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Defect and impurity engineered semiconductors II : symposium held April 13-17, 1998, San Francisco, California, U.S.A. / editors, S. Ashok [and others].

Additional Titles
Defect and impurity engineered semiconductors and devices II
Published
Warrendale, Pa. : Materials Research Society, [1998]
Copyright Date
©1998
Physical Description
xvii, 679 pages : illustrations ; 24 cm.
Additional Creators
Ashok, S.
Online Version

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Contents
Machine generated contents note: Systematic Analyses of Practical Problems Related to Defects and Metallic Impurities in Silicon / Y. Kitagawara / H. Takeno / S. Tobe -- Formation Energy of Interstitial Si in Au-Doped Si / M. Suezawa -- Investigation of the Effect of Thermal History on Ring-OSF Formation in CZ-Silicon Crystals / G. P. Kelly / M. Hourai / S. Umeno -- The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior / R. Falster / D. Gambaro / M. Olmo -- Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide / N. Ohtani / J. Takahashi / M. Katsuno -- Electrical Properties of Iron-Related Defects in CZ- and FZ-Grown n-Type Silicon / H. Kitagawa / S. Tanaka -- Thermal Stabilization of Nonstoichiometric GaAs Through Beryllium Doping / R. C. Lutz / P. Specht / R. Zhao -- Carbon Doping into GaAs Using Low-Energy Hydrocarbon Ions / H. Sanpei / T. Shima / Y. Makita -- Role of n-Type Codopants on Enhancing p-Type Dopants Incorporation in p-Type Codoped ZnSe / T. Yamamoto / H. Katayama-Yoshida -- Highly Efficient Nitrogen Doping into GaAs Using Low-Energy Nitrogen Molecular Ions / T. Shima / Y. Makita / S. Kimura -- Compliant Substrates With an Embedded Twist Boundary / Y. H. Lo / Z. H. Zhu -- Point Defects in Relaxed Si[subscript 1-x]Ge[subscript x] Alloy Layers / A. Mesli / A. N. Larsen -- High-Quality In[subscript x]Ga[subscript 1-x]As Heterostructures Grown on GaAs With MOVPE / M. T. Bulsara / E. A. Fitzgerald -- Suppression of Antiphase Disorder in GaAs Grown on Relaxed GeSi Buffers by Metalorganic Chemical Vapor Deposition / S. M. Ting / S. B. Samavedam / M. T. Currie -- Photo Modified Growth of GaAs by Chemical-Beam Epitaxy / R. Jothilingam / T. Farrell / T. B. Joyce -- Control of the Sb Redistribution in Strained SiGe Layers Using Point-Defect Injection / A. Yu. Kuznetsov / J. Cardenas / J. V. Grahn -- Ternary Group-III Nitrides Grown in MOVPE Production Reactors / O. Schoen / H. Protzmann / M. Schwambera -- Engineering Dislocation Dynamics in In[subscript x](Al[subscript y]Ga[subscript 1-y])[subscript 1-x]P Graded Buffers Grown on GaP by MOVPE / A. Y. Kim / E. A. Fitzgerald -- Discovery of Long-Range Order in Thin (2-20 nm) SiO[subscript 2] Films by Ion-Beam Analysis / N. Herbots / V. Atluri / Q. B. Hurst -- Recent Progress in Crystal Growth and Conductivity Control of Wide-Bandgap Group-III Nitride Semiconductors / I. Akasaki -- Ion Yield, Sputter Rate, and SIMS Matrix Effects in Quantitative Analysis of (Al[subscript x]Ga[subscript 1-x])[subscript 0.5]N[subscript 0.5] / D. L. Lefforge / Y. L. Chang / M. Ludowise -- Influence of Oxygen on Er-Related Emission in GaN With a Large Yellow Band / S. Uekusa / T. Goto / M. Kumagai -- Hydrogen Diffusion in Boron-Doped Diamond: Evidence of Hydrogen-Boron Interactions / J. Chevallier / B. Theys / C. Grattepain -- Damage in High Energy Light Ions Irradiated Silicon Carbide / P. Leveque / S. Godey / P. O. Renault -- First-Principles Study of N Impurities in SiC Polytypes / W. Windl / A. A. Demkov -- The Effect of Doping on Nitrogen Activation Energy Level in 4H-SiC / A. O. Evwaraye / S. R. Smith / W. C. Mitchel -- Aluminum Acceptors in Inequivalent Sites in 4H-SiC / S. R. Smith / A. O. Evwaraye / W. C. Mitchel -- Electronically-Enhanced Reaction of Process-Induced Defects in GaAs / K. Wada / H. Nakanishi / K. Yamada -- Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing / T. Maeda / J. W. Lee / C. R. Abemathy -- Peculiarities of Zn Diffusion From Polymer Spin-On Films in AlGaAs / A. V. Kamanin / A. M. Mintairov / N. M. Shmidt -- Limiting Factors of Backside External Gettering by Nanocavities and Aluminum-Silicon Alloying in Silicon Wafers / N. Gay Henquinet / S. Martinuzzi -- Intrinsic Gettering of Nickel and Copper for Advanced Low-Temperature Device Processes / S. Ogushi / N. Reilly / S. Sadamitsu -- Gettering of Iron and Surface Oxygen by High-Energy Boron Ion Implantation in Silicon / A. Jain / D. E. Mercer / N. Yu -- Plasma Chemistry Study of Plasma Ion Implantation Doping for CMOS Devices / S. Qin / Y. Zhou / C. Chan -- Influence of Metal Contamination on Minority Carrier Diffusion Length and Oxide Charge / J. Sakuma / Y. Okui / H. Miyazawa -- Near-Surface Defect Distribution in Silicon Under Etching / N. A. Yarykin -- ARC Suppression and Defect Reduction in Semiconductor Metallization / X. Li / D. Loo / B. Stimson -- Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon-Based Structures / M. Ashurov / Sh. Makhkamov / N. A. Tursunov -- Edge Effects of Nitride Film Patterning on Dislocation Generation in Local Oxidation of Silicon / I. V. Peidous / R. Sundaresan / E. Quek -- Ion Implantation-Induced Defects and the Influence of Titanium Silicidation / D. Z. Chi / S. Ashok / D. Theodore -- Fast Redistribution of Boron Impurity in Si During Ion Irradiation / A. N. Buzynin / A. E. Luk'yanov / V. V. Osiko -- Electrons and Defects in Semiconductors / H. J. Queisser -- Deuterium Sintering of CMOS Technology for Improved Hot Carrier Reliability / J. Lee / Z. Chen / K. Hess -- Charge State of Copper-Silicide Precipitates in Silicon and Its Application to the Understanding of Copper Precipitation Kinetics / A. A. Istratov / O. F. Vyvenko / C. Flink -- Structural and Photoluminescence Studies of Er-Implanted LT-GaAs:Be / R. L. Maltez / Z. Liliental-Weber / J. Washburn -- Growth and Luminescence Properties of III-N:Er Materials Doped During Chemical-Beam Epitaxy / J. D. MacKenzie / C. R. Abernathy / S. J. Pearton -- Behavior of Deep Defects After Hydrogen Passivation in ZnTe Studied by Photoluminescence and Photoconductivity / S. Bhunia / D. N. Bose -- The Incorporation and Complex Formation of Ag Acceptors in CdTe / H. Wolf / T. Filz / J. Hamann -- Boron Clusters in a Complex Defect in Silicon / M. Okamoto / K. Takayanagi / S. Takeda -- Charge Redistribution and Defect Relaxation in Heavily Damaged Silicon Studied Using Time Analyzed Transient Spectroscopy / Y. N. Mohapatra / P. K. Giri -- Studies of the Microscopic Nature of Cu Pairs in Silicon / A. A. Istratov / T. Heiser / H. Hieslmair -- Iron and Nickel Solubilities in Heavily-Doped Silicon and Their Energy Levels in the Silicon Bandgap at Elevated Temperatures / S. A. McHugo / R. J. McDonald / A. R. Smith -- Hydrogen-Enhanced Defect Reactions in Silicon: Interstitial Atom - Vacancy / A. N. Nazarov / V. M. Pinchuk / T. V. Yanchuk -- Theoretical Analysis of the Minority Carrier Lifetime in a Multicrystalline Wafer With Spatially Varying Defect Distribution / B. Sopori / W. Chen / N. M. Ravindra -- Noble Gas Induced Defects in Silicon / J. Weber / S. K. Estreicher -- Baseline Particle Reduction of Downstream Oxide Etchers Etching Contracts and Vias / B. Williams -- Behavior of Electron Traps Induced by Phosphidization and Nitridation of GaAs Surfaces / S. Nozu / K. Matsuda / T. Sugino -- Advanced Knowledge for Impurity Motion of Oxygen in Silicon and Its Application to Defect-State Analysis / H. Yamada-Kaneta -- Evaluating the Denuded Zone Depth by Measurements of the Recombination Activity of Bulk Defects / M. L. Polignano / M. Brambilla / F. Cazzaniga -- Injection-Level Spectroscopy of Metal Impurities in Silicon / R. K. Ahrenkiel / S. Johnston -- Point Defect Characterization of Zn and Cd-Based Semiconductors Using Positron Annihilation Techniques / G. Tessaro / P. Mascher -- Metal Impurity Mapping in Semiconductor Materials Using X-ray Fluorescence / S. A. McHugo / A. C. Thompson / H. Padmore -- Characterization of Deep Impurities in Semiconductors by Terahertz Tunnel Ionization / E. Ziemann / S. D. Ganichev / I. N. Yassievich -- Picosecond Time-Resolved Studies of Defect-Related Recombination in High Resistivity CdTe, CdZnTe / G. Ghislotti / D. Ielmini / E. Riedo -- Measurement of the Temperature Dependence of Silicon Recombination Lifetimes / S. Johnston / F. K. Ahrenkiel -- Characterization of the Structure and Polarity of Twin Boundaries in GaP / D. Cohen / D. L. Medlin / C. B. Carter -- A Novel Detection System for Defects and Chemical Contamination in Semiconductors Based Upon the Scanning Kelvin Probe / B. Lagel / I. D. Baikie / U. Petermann -- An Investigation of the Limit of Detection and the Scattering Dependence of the Optical Precipitate Profiler (OPP) / L. Mule'stagno / D. E. Hill / R. Standley -- Recombination Strength at Intra- and Inter-grain Defects in Crystalline Silicon Investigated by Low Temperature LBIC Scan Maps / I. Perichaud / S. Martinuzzi -- Impurity Segregation in Al Doped GaSb Studied by Cathodoluminescence Microscopy / P. Hidalgo / B. Mendez / J. Piqueras -- Phosphorus Passivation of GaAs / S. P. Watkins / X. Xu / J. Hu -- Controlled Surface Fermi-Level on the SeS[subscript 2]-Passivated n-GaAs (100) / J. Sun / F. J. Himpsel / T. F. Kuech -- The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO[subscript 2] Interface / P. K. Huriey / C. Leveugle / A. Mathewson -- A Molecular Dynamics Study of Step Motions on Vicinal Silicon Surfaces / A. M. Mazzone.
Subject(s)
ISBN
1558994165
Note
AVAILABLE ONLINE TO AUTHORIZED PSU USERS.
Bibliography Note
Includes bibliographical references and indexes.
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