Actions for X-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon [electronic resource].

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X-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Energy Research, 2002.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
17 pages : digital, PDF file
Additional Creators
Stanford Linear Accelerator Center, United States. Department of Energy. Office of Energy Research, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Stacking faults in boron-implanted silicon give rise to streaks or rods of scattered x-ray intensity normal to the stacking fault plane. We have used the diffuse scattering rods to follow the growth of faults as a function of time when boron-implanted silicon is annealed in the range 925 - 1025 C. From the growth kinetics we obtain an activation energy for interstitial migration in silicon: E₁ = 1.98±0.06eV. The measurements of intensity and size versus time suggest that faults do not shrink and disappear but rather are annihilated by a dislocation reaction mechanism.
Report Numbers
E 1.99:slac-pub-9244
slac-pub-9244
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Note
Published through SciTech Connect.
06/14/2002.
"slac-pub-9244"
Patel, Jamshed R.
Type of Report and Period Covered Note
Topical;
Funding Information
AC03-76SF00515
View MARC record | catkey: 14669129