The application of ion channeling to study the lattice site location of hydrogen in solids is briefly reviewed. The technique has been applied to both metals and semiconductors and is particularly valuable when combined with ion implantation for the introduction of hydrogen in the study of hydrogen trapping by defects.
Report Numbers
E 1.99:sand-79-0657c E 1.99: conf-790127-8 conf-790127-8 sand-79-0657c
Published through SciTech Connect. 01/01/1979. "sand-79-0657c" " conf-790127-8" Workshop on analysis of hydrogen in solids, Albuquerque, NM, USA, 23 Jan 1979. Picraux, S.T. Sandia Labs., Albuquerque, NM (USA)