Development of High Power X-Band Semiconductor RF Switch for Pulse Compression Systems of Future Linear Colliders [electronic resource].
- Washington, D.C. : United States. Dept. of Energy. Office of Energy Research, 2000.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- vp : digital, PDF file
- Additional Creators:
- Stanford Linear Accelerator Center
United States. Department of Energy. Office of Energy Research
United States. Department of Energy. Office of Scientific and Technical Information
- We describe development of semiconductor X-band high-power RF switches. The target applications are high-power RF pulse compression systems for future linear colliders. We describe the design methodology of the architecture of the whole switch systems. We present the scaling law that governs the relation between power handling capability and number of elements. We designed and built several active waveguide windows for the active element. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of a few megawatts at X-band.
- Published through SciTech Connect.
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