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A gate drive circuit for gate-turn-off (GTO) devices in series stack [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1999.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
5 pages : digital, PDF file
Additional Creators
Argonne National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements.
Report Numbers
E 1.99:anl/asd/cp-97743
anl/asd/cp-97743
Subject(s)
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Note
Published through SciTech Connect.
04/13/1999.
"anl/asd/cp-97743"
1999 Particle Accelerator Conference (PAC '99), New York, NY (US), 03/29/1999--04/02/1999.
Despe, O.
Funding Information
W-31109-ENG-38
View MARC record | catkey: 14688119