High quantum yield, low emittance electron sources [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy. Office of Energy Research, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description:
- 13 pages : digital, PDF file
- Additional Creators:
- Stanford Linear Accelerator Center, United States. Department of Energy. Office of Energy Research, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- The upper limit for the rms normalized emittance is shown to be 0.3 x 10⁻⁶π m per mm of radius for an electron beam extracted from a flat copper photocathode illuminated uniformly with 266-nm light. Using a III-V semiconductor such as GaAs, this limit can be reduced to 0.1 x 10⁻⁶π m at room temperature and as low as 0.05 x 10⁻⁶π m at cryogenic temperatures while maintaining a reasonable quantum yield. Semiconductor photocathodes in rf guns with an emittance compensation system are briefly compared with a new idea--a fast, pulsed, semiconductor photocathode closely coupled to an rf accelerating system.
- Report Numbers:
- E 1.99:slac-pub--7760
E 1.99: conf-980134--
conf-980134--
slac-pub--7760 - Subject(s):
- Other Subject(s):
- Note:
- Published through SciTech Connect.
03/01/1998.
"slac-pub--7760"
" conf-980134--"
"DE98059197"
Advanced ICFA beam dynamics workshop on quantum aspects of beam physics, Monterey, CA (US), 01/04/1998--01/09/1998.
Clendenin, J.E.; Mulhollan, G.A. - Funding Information:
- AC03-76SF00515
View MARC record | catkey: 14688903