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Physics of high intensity nanosecond electron source [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1993.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
11 pages : digital, PDF file
Additional Creators
Stanford Linear Accelerator Center, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
A new high-intensity, short-time electron source is now being used at the Stanford Linear Accelerator Center (SLAC). Using a GaAs negative affinity semiconductor in the construction of the cathode, it is possible to fulfill operation requirements such as peak currents of tens of amperes, peak widths of the order of nanoseconds, hundreds of hours of operation stability, and electron spin polarization. The cathode is illuminated with high intensity laser pulses, and photoemitted electrons constitute the yield. Because of the high currents, some nonlinear effects are present. Very noticeable is the so-called Charge Limit (CL) effect, which consists of a limit on the total charge in each pulse-that is, the total bunch charge stops increasing as the light pulse total energy increases. In this paper, we explain the mechanism of the CL and how it is caused by the photovoltaic effect. Our treatment is based on the Three-Step model of photoemission. We relate the CL to the characteristics of the surface and bulk of the semiconductor, such as doping, band bending, surface vacuum level, and density of surface states. We also discuss possible ways to prevent the Char`s Level effect.
Report Numbers
E 1.99:slac-pub--6307
E 1.99: slac/ssrl--0043
E 1.99: conf-930722--42
conf-930722--42
slac/ssrl--0043
slac-pub--6307
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
08/01/1993.
"slac-pub--6307"
" slac/ssrl--0043"
" conf-930722--42"
"DE93041023"
Annual meeting of the Society of Photo-Optical Instrumentation Engineers (SPIE),San Diego, CA (United States),11-16 Jul 1993.
Spicer, W.E.; Herrera-Gomez, A.
Funding Information
AC03-76SF00515
View MARC record | catkey: 14692733