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Pressure dependence of Raman modes in the chalcopyrite quaternary alloy AgxCu1-xGaS2 [electronic resource].

Published:
Washington, D.C. : United States. Dept. of Energy, 2000.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:
10 pages : digital, PDF file
Additional Creators:
Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
Raman scattering in the chalcopyrite quaternary alloy AgₓCu{sub 1-x}GaS₂ has been studied under high pressure (up to 7 GPa) and at low temperature (50 K) using a diamond anvil high pressure cell for alloy concentrations x=1, 0.75, 0.5, 0.25 and 0. This has allowed us to determine the dependence of their zone-center phonon modes on both pressure and alloy concentration. The resultant phonon pressure coefficients are helpful in understanding the nature of the phonon modes in these chalcopyrites.
Report Numbers:
E 1.99:lbnl--48893
lbnl--48893
Subject(s):
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Note:
Published through SciTech Connect.
12/31/2000.
"lbnl--48893"
9th International Conference on High Pressure Semiconductor Physics, Sapporo (JP), 09/24/2000--09/28/2000.
Yu, Peter Y.; Choi, In-Hwan.
Funding Information:
AC03-76SF00098
506201
View MARC record | catkey: 14710926