Actions for Physics of Plasma-Based Ion Implantation&Deposition (PBIID)and High Power Impulse Magnetron Sputtering (HIPIMS) [electronic resource] : A Comparison

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Physics of Plasma-Based Ion Implantation&Deposition (PBIID)and High Power Impulse Magnetron Sputtering (HIPIMS) [electronic resource] : A Comparison

Published
Washington, D.C. : United States. Dept. of Energy, 2007.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators
United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The emerging technology of High Power Impulse MagnetronSputtering (HIPIMS) has much in common with the more establishedtechnology of Plasma Based Ion Implantation&Deposition (PBIID):both use pulsed plasmas, the pulsed sheath periodically evolves andcollapses, the plasma-sheath system interacts with the pulse-drivingpower supply, the plasma parameters are affected by the power dissipated,surface atoms are sputtered and secondary electrons are emitted, etc.Therefore, both fields of science and technology could learn from eachother, which has not been fully explored. On the other hand, there aresignificant differences, too. Most importantly, the operation of HIPIMSheavilyrelies on the presence of a strong magnetic field, confiningelectrons and causing their ExB drift, which is closed for typicalmagnetron configurations. Second, at the high peak power levels used forHIPIMS, 1 kW/cm2 or greater averaged over the target area, the sputteredmaterial greatly affects plasma generation. For PBIID, in contrast,plasma generation and ion processing of the surface (ion implantation,etching, and deposition) are considered rela-tively independentprocesses. Third, secondary electron emission is generally considered anuisance for PBIID, especially at high voltages, whereas it is a criticalingredient to the operation of HIPIMS. Fourth, the voltages in PBIID areoften higher than in HIPIMS. For the first three reasons listed above,modelling of PBIID seems to be easier and could give some guidance forfuture HIPIMS models, which, clearly, will be more involved.
Report Numbers
E 1.99:lbnl--62578
lbnl--62578
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Note
Published through SciTech Connect.
08/28/2007.
"lbnl--62578"
": 600301010"
physica status solidi 205 4 FT
Anders, Andre.
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Funding Information
DE-AC02-05CH11231
Z2PA30
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