Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 2003.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 16 pages : digital, PDF file
Additional Creators:: Lawrence Berkeley National Laboratory, United States. Department of Energy, United States. National Security Agency, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

In this article we discuss open questions in electronic sputtering of solids by slow, highly charged ions in the context of their application in a single ion implantation scheme. High yields of secondary electrons emitted when highly charged dopant ions impinge on silicon wafers allow for formation of non-Poissonian implant structures such as single atom arrays. Control of high spatial resolution and implant alignment require the use of nanometer scale apertures. We discuss electronic sputtering issues on mask lifetimes, and damage to silicon wafers.

Report Numbers:

E 1.99:lbnl--53393
lbnl--53393

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Published through SciTech Connect.
07/16/2003.
"lbnl--53393"
16th International Conference on Ion Beam Analysis, Albuquerque, NM (US), 06/30/2003--07/04/2003.
Keller, R.; Nilsson, J.; Schneider, D.H.; Park, S.J.; Liddle, J.A.; Bokor, J.; Schenkel, T.; Persaud, A.; Rangelow, I.W.; Radmilivitc, V.R.; Grabiec, P.

Funding Information:

AC03-76SF00098
43GW01

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