Characterization of power IGBTs under pulsed power conditions [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 2009.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Additional Creators:
- Los Alamos National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- The power insulated gate bipolar transistor (IGBT) is used in many types of applications. Although the use of the power IGBT has been well characterized for many continuous operation power electronics applications, little published information is available regarding the performance of a given IGBT under pulsed power conditions. Additionally, component libraries in circuit simulation software packages have a finite number of IGBTs. This paper presents a process for characterizing the performance of a given power IGBT under pulsed power conditions. Specifically, signals up to 3.5 kV and 1 kA with 1-10 {micro}s pulse widths have been applied to a Powerex QIS4506001 IGBT. This process utilizes least squares curve fitting techniques with collected data to determine values for a set of modeling parameters. These parameters were used in the Oziemkiewicz implementation of the Hefner model for the IGBT that is utilized in some circuit simulation software packages. After the nominal parameter values are determined, they can be inserted into the Oziemkiewicz implementation to simulate a given IGBT.
- Report Numbers:
- E 1.99:la-ur-09-06755
E 1.99: la-ur-09-6755
la-ur-09-6755
la-ur-09-06755 - Other Subject(s):
- Note:
- Published through SciTech Connect.
01/01/2009.
"la-ur-09-06755"
" la-ur-09-6755"
FT
Dale, Gregory E; Kovaleski, Scott; Vangordon, James. - Funding Information:
- AC52-06NA25396
View MARC record | catkey: 14756757