Using Measurements of Fill Factor at High Irradiance to Deduce Heterobarrier Band Offsets [electronic resource] : Preprint
- Washington, D.C. : United States. Dept. of Energy, 2011.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 6 pages : digital, PDF file
- Additional Creators:
- National Renewable Energy Laboratory (U.S.), United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Using a 2D device simulation tool, we examine the high irradiance behavior of a single junction, GaAs concentrator cell as a function of the doping in the back surface confinement layer. The confinement layer is designed to be a barrier for both holes and electrons in the base of the solar cell. For a p-type base we show that the FF of the cell at high concentrations is a strong function of both the magnitude of the valence band offset and the doping level in the barrier. In short, for a given valence band offset (VBO), there is a critical barrier doping, below which the FF drops rapidly with lower doping. This behavior is confirmed experimentally for a GaInP/GaAs double heterostructure solar cell where the critical doping concentration (at 500 suns) in the back surface confinement layer is ~1e18 cm-3 for a VBO of 300 meV.
- Report Numbers:
- E 1.99:nrel/cp-5200-50737
- Other Subject(s):
- Published through SciTech Connect.
Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), 19-24 June 2011, Seattle, Washington.
Steiner, M. A.; Olson, J. M.; Kanevce, A.
- Funding Information:
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