Epitaxial Growth of BGaAs and BGaInAs by MOCVD [electronic resource] : Preprint
- Published
- Washington, D.C. : United States. Dept. of Energy, 2001.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description
- 4 pages : digital, PDF file
- Additional Creators
- United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
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- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs. BGaInAs can potentially be used in strain-free high-efficiency III-V solar cells, but the growth of sufficiently high-quality epitaxial BGaInAs using diborane has proven difficult. We compare the use of alternative boron precursors (trimethylboron [TMB], triethylboron [TEB], and boron trifluoride [BF₃]) with diborane for the MOCVD growth of these boron-containing III-V alloys. We find that TMB and BF₃ do not result in significant boron incorporation into GaAs. TEB does result in boron incorporation in a manner very similar to diborane. Both diborane and TEB incorporate more efficiently using triethylgallium (TEG) rather than trimethylgallium (TMG), making TEG a preferred source of gallium for BGaAs epitaxy. Using TEB together with TEG, a higher boron composition (x = 4%-7%) has been achieved than has been previously reported, but we are still unable to achieve high- quality BGaInAs with the correct composition for solar cell applications.
- Report Numbers
- E 1.99:nrel/cp-520-31014
nrel/cp-520-31014 - Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
10/01/2001.
"nrel/cp-520-31014"
Presented at the NCPV Program Review Meeting, Lakewood, CO (US), 10/14/2001--10/17/2001.
Norman, A. G.; Young, M.; Kurtz, S. R.; Olson, J. M.; Kramer, C.; Barber, G.; Reedy, R. C.; Geisz, J. F.; Swartzlander, A. B.; Friedman, D. J.
National Renewable Energy Lab., Golden, CO. (US) - Funding Information
- AC36-99-GO10337
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