High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 1996.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 4 pages : digital, PDF file
Additional Creators:: Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

The authors performed a detailed study to examine the limiting performance available using photovoltaic-grade Cz silicon. Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and defect concentrations.The study included optimization of fabrication processes, development of advanced device structures, and detailed model calculations to project future performance improvements. Process and device optimization resulted in demonstration of 75-{micro}s bulk lifetimes and 17.6%-efficient large-area cells using photovoltaic-grade Cz silicon. Detailed calculations based on the material and device evaluation of the present work project efficiencies of 20% for photovoltaic-grade Cz silicon with properly optimized processing and device structures.

Report Numbers:

E 1.99:conf-960513--20
conf-960513--20

Subject(s):

Solar Energy

Other Subject(s):

Note:

Published through SciTech Connect.
12/01/1996.
"conf-960513--20"
"DE97001102"
25. photovoltaic solar energy conference, Washington, DC (United States), 13-17 May 1996.
King, R.R.; Gee, J.M.; Mitchell, K.W.

Funding Information:

AC04-94AL85000

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