Actions for GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects [electronic resource].
GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy, 1995.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description
- 4 pages : digital, PDF file
- Additional Creators
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced the forward tunneling characteristics. In fact, in a InGaAs/GaAsSb tunnel diode a peak tunneling current sufficient for a 1000 sun intercell interconnect was achieved with p = 1.5×l0¹⁸ cm⁻³ while a similarly doped all-InGaAs diode was rectifying. This approach affords a new degree of freedom in designing tunnel junctions for tandem solar cell interconnects. Previously only doping levels could be varied to control the tunneling properties. Our approach relaxes the doping requirements by employing a GaAsSb-based heterojunction.
- Report Numbers
- E 1.99:sand--94-1597c
E 1.99: conf-941203--13
conf-941203--13
sand--94-1597c - Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
01/01/1995.
"sand--94-1597c"
" conf-941203--13"
"DE95004779"
1. world conference on photovoltaic energy conversion,Waikoloa, HI (United States),5-9 Dec 1994.
Plut, T.A.; Tigges, C.P.; Zolper, J.C.; Klem, J.F. - Funding Information
- AC04-94AL85000
View MARC record | catkey: 14796421