Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991 [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1991. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 65 pages : digital, PDF file
- Additional Creators:
- University of Delaware, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Results and conclusion of Phase I of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe₂ and CdTe solar cells. The kinetics of the formation of CuInSe₂ by selenization with hydrogen selenide was investigated and a CuInSe₂/CdS solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe₂ films and a cell efficiency of 7%. Detailed investigations of the open circuit voltage of CuInSe₂ solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe₂ thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe₂ is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10% can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm² are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.
- Published through SciTech Connect., 11/01/1991., "nrel/tp--214-4502", "DE92001171", Phillips, J.E.; Birkmire, R.W.; McCandless, B.E.; Shafarman, W.N.; Hegedus, S.S.; Baron, B.N., and National Renewable Energy Lab., Golden, CO (United States)
- Type of Report and Period Covered Note:
- Annual; 01/01/1990 - 12/31/1991
- Funding Information:
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