Actions for Floating substrate process. Large area silicon sheet task low-cost silicon solar array project. Third quarterly progress report, June 21, 1976--September 24, 1976 [electronic resource].

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Floating substrate process. Large area silicon sheet task low-cost silicon solar array project. Third quarterly progress report, June 21, 1976--September 24, 1976 [electronic resource].

Published
Cincinnati, Ohio : General Electric Company, 1976.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
Pages: 27 : digital, PDF file
Additional Creators
General Electric Company and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The Seeded Growth Furnace was completed and operated extensively during the third quarter. Optimum thermal geometry, gas flows, and withdrawal rates are being determined. Surface growth was obtained having growth velocity as high as 5 to 6 mm/min. The surface growth has generally taken the form of interlocking crystals and is thin enough to follow the liquid surface. Its thickness has been determined in one case to be 20 microns. A molybdenum susceptor has been made for the seeded growth furnace. It is anticipated that this new design will eliminate the problems caused by films on the melt and seed crystal and lead to improved crystal structure in the silicon growth. A series of experiments were performed in order to determine whether the reactor gas streams were sources of contamination. Nitrogen reacts with silicon at 1100/sup 0/C to coat its surface with a film 30 to 150A thick. Silicon heated in hydrogen at temperatures between 1000 and 1200/sup 0/C maintains a very clean, film-free surface.
Report Numbers
E 1.99:erda/jpl/954350-76/3
erda/jpl/954350-76/3
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Note
Published through SciTech Connect.
09/27/1976.
"erda/jpl/954350-76/3"
Garfinkel, M.; Hall, R.N.
Funding Information
NAS-7-100-954350
View MARC record | catkey: 14797110