Novel duplex vapor-electrochemical method for silicon solar cells. Quarterly progress report Nos. 2 and 3, May 1, 1976--October 31, 1976 [electronic resource].
- Washington, D.C : United States. Energy Research and Development Administration, 1976. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 25 : digital, PDF file
- Additional Creators:
- United States. Energy Research and Development Administration, Jet Propulsion Laboratory (U.S.), and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Silicon can be produced by the reduction of SiF/sub 4/ gas with sodium in a reaction that initiates at temperatures lower than 175/sup 0/C. The kinetics of the reaction can be affected by varying the partial pressure of SiF/sub 4/ gas. Emission spectrographic analysis of product silicon shows the major impurity to be sodium; but the metallic impurities that are known to degrade solar cell efficiency, such as Ti, V, Zr, and Cr, were not detected and must be less than 10 ppM.
- Published through SciTech Connect., 11/01/1976., "erda/jpl/954471-76/2", " erda/jpl/954471-76/3", Nanis, L.; Kapur, V. K., and Stanford Research Inst., Menlo Park, CA (USA)
- Funding Information:
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