Evaluation of selected chemical processes for production of low-cost silicon. First quarterly progress report, October 9--December 15, 1975 [electronic resource].
- Columbus, Ohio : Battelle Memorial Institute, 1976. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 48 : digital, PDF file
- Additional Creators:
- Battelle Memorial Institute and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- The objective of this program is to evaluate, in the light of the latest available information and modern technology, the prospect for low cost solar silicon production by two processes which have yielded semiconductor-grade silicon commercially in the past, but whose development was curtailed by unfavorable market conditions in the early semiconductor industry. These processes are (1) zinc reduction of silicon tetrachloride and (2) thermal dissociation (or hydrogen reduction) of silicon tetraiodide. This report includes analyses of available thermodynamic data on both processes and predictions of equilibrium product yields over accessible ranges of process conditions. A parallel program of experimental work has been carried out to test the thermodynamic predictions and to evaluate process operability at several critical points. Preliminary results indicate that acceptable process yields and product structure can be obtained by zinc reduction of silicon tetrachloride in a fluidized-bed of seed particles when the zinc is fed to the bed as a vapor. Preliminary experimental results on the iodination of silicon dioxide/carbon mixtures confirm the thermodynamic predictions that temperatures in excess of 1400 C will produce potentially acceptable yields of silicon tetraiodide. (auth)
- Published through SciTech Connect., 01/08/1976., "erda/jpl-954339-75/1", and Wilson, W.J.; Carmichael, D.C.; Blocher, J.M. Jr.; Browning, M.F.
- Funding Information:
- NAS-7-100-954339 l
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