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Automated Array Assembly. Phase 2. Annual technical progress report, 1978 [electronic resource].

Published
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1979.
Physical Description
Pages: 116 : digital, PDF file
Additional Creators
United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The Automated Array Assembly Task, Phase 2 of the Low Cost Silicon Solar Array (LSSA) Project is a process development task. This contract includes solar cell module process development activities in the areas of Surface Preparation. Plasma Processing, Diffusion, Cell Processing and Module Fabrication. In addition, a High Efficiency Cell Development Activity is included. The overall goal is to advance solar cell module process technology to meet the 1986 goal of a production capacity of 500 megawatts per year at a cost of less than $500 per kilowatt. This contract will focus on the process element developments stated above and will propose an overall module process. During 1978, process step development was carried out on texture etching including the evolution of a conceptual process model for the texturing process; plasma etching; and diffusion studies tat focused on doped polymer diffusion sources. Cell processing was carried out to test process steps and a simplified diode solar cell process was developed. Cell processing was also run to fabricate square cells to populate sample minimodules. Module fabrication featured the demonstration of a porcelainized steel-glass structure that should exceed the 20 year life goal of the LSA program. In a related set of studies, high efficiency cell development was carried out on the Texas Instruments developed Tandem Junction Cell (TJC) and a modification of the TJC called the Front Surface Field cell. These cells feature planar backslide contacts with no metallization of the frontside. Cell efficiencies in excess of 16% at AM1 have been attained with only modest fill factors. Photo generated current densities as high as 44 mA/cm/sup 2/ at AM0 have been attained. A transistor-like model has been proposed that fits the cell performance and provides a guideline for future improvements in cell performance.
Report Numbers
E 1.99:doe/jpl/954881-4
doe/jpl/954881-4
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
02/01/1979.
"doe/jpl/954881-4"
Carbajal, B G.
Texas Instruments, Inc., Dallas (USA)
Funding Information
NAS-7-100-954881
View MARC record | catkey: 14798911