Silicon ribbon growth by a capillary action shaping technique. Quarterly technical progress report No. 2 [electronic resource].
- Published
- Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1975.
- Physical Description
- Pages: 79 : digital, PDF file
- Additional Creators
- United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Progress during the second quarter of the contractual effort is described. The work performed related mainly to ribbon growth by a capillary action shaping technique and to ribbon characterization. Actual progress in the crystal growth area includes the evaluation of 10 potential die materials other than carbon and the process development for 25-mm-wide ribon. From the die study it is concluded that boron carbide, silicon carbide, and silicon nitride may warrant further investigation as die materials. Process development for 25-mm ribbon growth resulted in ribbons of superior surface quality. Potential ribbongrowth problems encountered and discussed include a boron doping anomaly and frozen-in stresses in ribbons. The characterization effort concentrated on the development of a solar-cell process to be used for ribbon characterization. Material requirements and detailed process procedures are given. Solar cells fabricated by this process are compared with commercially available solar cells and compare favorably. A transmission electron microscopy study of planar boundaries frequently observed in ribbon crystals is reported. (auth)
- Report Numbers
- E 1.99:erda/jpl-954144-75/2
erda/jpl-954144-75/2 - Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
01/01/1975.
"erda/jpl-954144-75/2"
Ciszek, T.F.; Schwuttke, G.H.; Kran, A.
International Business Machines Corp., Hopewell Junction, NY (USA). East Fishkill Lab. - Funding Information
- NAS-7-100-954144
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