Structural tuning of residual conductivity in highly mismatched III-V layers [electronic resource].
- Albuquerque, N.M. : Sandia Corporation, 2002. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Additional Creators:
- Sandia Corporation and United States. Department of Energy. Office of Scientific and Technical Information
- A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.
- Published through SciTech Connect., 01/01/2002., "us 6406931", and Han, Jung; Figiel, Jeffrey J.
- Funding Information:
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