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Gas source molecular beam epitaxy : growth and properties of phosphorus containing III-V heterostructures / M.B. Panish, H. Temkin
Author
Panish, M. B.
Published
Berlin ; New York : Springer-Verlag, [1993]
Copyright Date
©1993
Physical Description
xiv, 428 pages : illustrations (some color) ; 25 cm.
Additional Creators
Temkin, H.
Full Text available online
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Series
Springer series in materials science ; v. 26.
Subject(s)
Molecular beam epitaxy
Gallium arsenide semiconductors
ISBN
038756540X (New York : acid-free paper)
354056540X (Berlin : acid-free paper)
Bibliography Note
Includes bibliographical references (pages 399-421) and index.
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| catkey: 1530962