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Single-Band and Dual-Band Infrared Detectors

Author
Ting, David Z.
Published
January 6, 2015.
Physical Description
1 electronic document
Additional Creators
Khoshakhlagh, Arezou, Gunapala, Sarath D., Nguyen, Jean, and Soibel, Alexander
Online Version

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Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 20150003431.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15415639