Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors
- Su, Ching-Hua
- September 17, 2013.
- Physical Description:
- 1 electronic document
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
- The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 20150003114.
- No Copyright.
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